MMJT350T1G PNP Transistor

The MMJT350T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMJT350T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMJT350T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMJT350T1G transistor as follows.

MMJT350T1G Transistor Specification

Transistor Code		MMJT350T1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-223
Transistor SMD Code		T350
Collector Power Dissipation (Maximum)	PC	2.75W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30

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