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MMDT8150 NPN Transistor

The MMDT8150 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMDT8150 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMDT8150 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMDT8150 transistor as follows.

Circuit diagram symbol of the MMDT8150 transistor

MMDT8150 Transistor Specification

Transistor Code MMDT8150
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-26 SOT-363
Transistor SMD Code T81*
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 32V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 180
Transition Frequency FT 150MHz
Collector Capacitance CC 15pF

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More Transistors Datasheets in SOT-26_SOT-363 Package

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