MMDT5551 NPN Transistor

The MMDT5551 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMDT5551 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMDT5551 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMDT5551 transistor as follows.

MMDT5551 Transistor Specification

Transistor Code		MMDT5551
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT363
Transistor SMD Code		K4N
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.2A
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	100MHz

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