MMBTH10RG NPN Transistor

The MMBTH10RG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTH10RG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH10RG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTH10RG transistor as follows.

MMBTH10RG Transistor Specification

Transistor Code		MMBTH10RG
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		3E
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	450MHz

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