MMBTH10M3T5G NPN Transistor

The MMBTH10M3T5G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTH10M3T5G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH10M3T5G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTH10M3T5G transistor as follows.

MMBTH10M3T5G Transistor Specification

Transistor Code		MMBTH10M3T5G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT723
Transistor SMD Code		AJ
Collector Power Dissipation (Maximum)	PC	0.64W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.04A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	650MHz

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