MMBTH10 NPN Transistor

The MMBTH10 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTH10 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH10 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTH10 transistor as follows.

MMBTH10 Transistor Specification

Transistor Code		MMBTH10
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Transistor SMD Code		3E_3EM_K3H_K3Y
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	650MHz
Collector Capacitance	CC	0.7pF

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