MMBTH10-4LT1G NPN Transistor

The MMBTH10-4LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTH10-4LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTH10-4LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTH10-4LT1G transistor as follows.

MMBTH10-4LT1G Transistor Specification

Transistor Code		MMBTH10-4LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		3E4.
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.004A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	650MHz
Collector Capacitance	CC	0.7pF

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