MMBTA70LT1G PNP Transistor

The MMBTA70LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBTA70LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA70LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBTA70LT1G transistor as follows.

MMBTA70LT1G Transistor Specification

Transistor Code		MMBTA70LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		M2C
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	125MHz
Collector Capacitance	CC	4pF

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