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MMBTA64LT1 PNP Transistor

The MMBTA64LT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBTA64LT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA64LT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBTA64LT1 transistor as follows.

Circuit diagram symbol of the MMBTA64LT1 transistor

MMBTA64LT1 Transistor Specification

Transistor Code MMBTA64LT1
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code 2V
Collector Power Dissipation (Maximum) PC 0.33W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 20000
Transition Frequency FT 125MHz

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