MMBTA63LT1 PNP Transistor

The MMBTA63LT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBTA63LT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA63LT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBTA63LT1 transistor as follows.

MMBTA63LT1 Transistor Specification

Transistor Code		MMBTA63LT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		2U
Collector Power Dissipation (Maximum)	PC	0.33W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		12000
Transition Frequency	FT	125MHz

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