MMBTA56LT1G PNP Transistor

The MMBTA56LT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBTA56LT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA56LT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBTA56LT1G transistor as follows.

MMBTA56LT1G Transistor Specification

Transistor Code		MMBTA56LT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		2GM
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	50MHz

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