MMBTA55LT1 PNP Transistor

The MMBTA55LT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBTA55LT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA55LT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBTA55LT1 transistor as follows.

MMBTA55LT1 Transistor Specification

Transistor Code		MMBTA55LT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		2H
Collector Power Dissipation (Maximum)	PC	0.33W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	100MHz

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