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MMBTA20LT1 NPN Transistor

The MMBTA20LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTA20LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA20LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTA20LT1 transistor as follows.

Circuit diagram symbol of the MMBTA20LT1 transistor

MMBTA20LT1 Transistor Specification

Transistor Code MMBTA20LT1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT23
Collector Power Dissipation (Maximum) PC 0.33W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 125MHz
Collector Capacitance CC 4pF

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