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MMBTA14LT1G NPN Transistor

The MMBTA14LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBTA14LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBTA14LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBTA14LT1G transistor as follows.

Circuit diagram symbol of the MMBTA14LT1G transistor

MMBTA14LT1G Transistor Specification

Transistor Code MMBTA14LT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code 1N
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 5000
Transition Frequency FT 125MHz

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