MMBT930R NPN Transistor

The MMBT930R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT930R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT930R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT930R transistor as follows.

MMBT930R Transistor Specification

Transistor Code		MMBT930R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	30MHz
Collector Capacitance	CC	6pF

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