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MMBT8050LT1 NPN Transistor

The MMBT8050LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT8050LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT8050LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT8050LT1 transistor as follows.

Circuit diagram symbol of the MMBT8050LT1 transistor

MMBT8050LT1 Transistor Specification

Transistor Code MMBT8050LT1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code A6
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 100MHz
Collector Capacitance CC 9pF

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