MMBT6429LT1G NPN Transistor

The MMBT6429LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT6429LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT6429LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT6429LT1G transistor as follows.

MMBT6429LT1G Transistor Specification

Transistor Code		MMBT6429LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		M1L
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	55V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		500
Transition Frequency	FT	100MHz
Collector Capacitance	CC	3pF

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