MMBT6427LT1 NPN Transistor

The MMBT6427LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT6427LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT6427LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT6427LT1 transistor as follows.

MMBT6427LT1 Transistor Specification

Transistor Code		MMBT6427LT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT323
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.35A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		50000
Collector Capacitance	CC	7pF

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