MMBT5551M3T5G NPN Transistor

The MMBT5551M3T5G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5551M3T5G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5551M3T5G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5551M3T5G transistor as follows.

MMBT5551M3T5G Transistor Specification

Transistor Code		MMBT5551M3T5G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT723
Collector Power Dissipation (Maximum)	PC	0.64W
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.06A
Forward Current Transfer Ratio (hFE Value)		80

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