MMBT5551L NPN Transistor

The MMBT5551L is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5551L transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5551L transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5551L transistor as follows.

MMBT5551L Transistor Specification

Transistor Code		MMBT5551L
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.6A
Forward Current Transfer Ratio (hFE Value)		80

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