MMBT5550L NPN Transistor

The MMBT5550L is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5550L transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5550L transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5550L transistor as follows.

MMBT5550L Transistor Specification

Transistor Code		MMBT5550L
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		M1F
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	0.6A
Forward Current Transfer Ratio (hFE Value)		60

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