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MMBT5401-G PNP Transistor

The MMBT5401-G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT5401-G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5401-G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT5401-G transistor as follows.

Circuit diagram symbol of the MMBT5401-G transistor

MMBT5401-G Transistor Specification

Transistor Code MMBT5401-G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code 2L
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 160V
Collector-Emitter Voltage (Maximum) VCE 150V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz

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