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MMBT5135 NPN Transistor

The MMBT5135 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5135 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5135 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5135 transistor as follows.

Circuit diagram symbol of the MMBT5135 transistor

MMBT5135 Transistor Specification

Transistor Code MMBT5135
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 40MHz
Collector Capacitance CC 25pF

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