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MMBT5132 NPN Transistor

The MMBT5132 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5132 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5132 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5132 transistor as follows.

Circuit diagram symbol of the MMBT5132 transistor

MMBT5132 Transistor Specification

Transistor Code MMBT5132
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 200MHz
Collector Capacitance CC 3.5pF

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