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MMBT5089LT1G NPN Transistor

The MMBT5089LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5089LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5089LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5089LT1G transistor as follows.

Circuit diagram symbol of the MMBT5089LT1G transistor

MMBT5089LT1G Transistor Specification

Transistor Code MMBT5089LT1G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT-23
Transistor SMD Code 1R
Collector Power Dissipation (Maximum) PC 0.225W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4.5V
Forward Current Transfer Ratio (hFE Value) 400
Transition Frequency FT 50MHz
Collector Capacitance CC 4pF

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