MMBT489LT1G NPN Transistor

The MMBT489LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT489LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT489LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT489LT1G transistor as follows.

MMBT489LT1G Transistor Specification

Transistor Code		MMBT489LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		N3
Collector Power Dissipation (Maximum)	PC	0.31W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		300
Transition Frequency	FT	100MHz
Collector Capacitance	CC	15pF

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