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MMBT3646 NPN Transistor

The MMBT3646 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT3646 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT3646 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT3646 transistor as follows.

Circuit diagram symbol of the MMBT3646 transistor

MMBT3646 Transistor Specification

Transistor Code MMBT3646
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Transistor SMD Code 23
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 350MHz
Collector Capacitance CC 5pF

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