MMBT3416LT3G NPN Transistor

The MMBT3416LT3G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT3416LT3G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT3416LT3G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT3416LT3G transistor as follows.

MMBT3416LT3G Transistor Specification

Transistor Code		MMBT3416LT3G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		GP
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		75

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