MMBT2907AWT1G PNP Transistor

The MMBT2907AWT1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT2907AWT1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT2907AWT1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT2907AWT1G transistor as follows.

MMBT2907AWT1G Transistor Specification

Transistor Code		MMBT2907AWT1G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-323
Transistor SMD Code		20
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	200MHz
Collector Capacitance	CC	8pF

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