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MMBT2131T1G PNP Transistor

The MMBT2131T1G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT2131T1G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT2131T1G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT2131T1G transistor as follows.

Circuit diagram symbol of the MMBT2131T1G transistor

MMBT2131T1G Transistor Specification

Transistor Code MMBT2131T1G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT-26 SOT-457
Transistor SMD Code DB
Collector Power Dissipation (Maximum) PC 0.342W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.7A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 150

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More Transistors Datasheets in SOT-26_SOT-457 Package