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MMBT1613R NPN Transistor

The MMBT1613R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT1613R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT1613R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT1613R transistor as follows.

Circuit diagram symbol of the MMBT1613R transistor

MMBT1613R Transistor Specification

Transistor Code MMBT1613R
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 80MHz
Collector Capacitance CC 25pF

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