MMBT1015-H PNP Transistor

The MMBT1015-H is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBT1015-H transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT1015-H transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBT1015-H transistor as follows.

MMBT1015-H Transistor Specification

Transistor Code		MMBT1015-H
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		BA
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	80MHz
Collector Capacitance	CC	4pF

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