MMBR4957LT1 PNP Transistor

The MMBR4957LT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBR4957LT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBR4957LT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBR4957LT1 transistor as follows.

MMBR4957LT1 Transistor Specification

Transistor Code		MMBR4957LT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		7F
Collector Power Dissipation (Maximum)	PC	0.278W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1200MHz
Collector Capacitance	CC	0.8pF

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