MMBC1321Q4 NPN Transistor

The MMBC1321Q4 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBC1321Q4 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBC1321Q4 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBC1321Q4 transistor as follows.

MMBC1321Q4 Transistor Specification

Transistor Code		MMBC1321Q4
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		Q4
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		90
Transition Frequency	FT	600MHz
Collector Capacitance	CC	1.2pF

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