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MMBA811C8 PNP Transistor

The MMBA811C8 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MMBA811C8 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBA811C8 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MMBA811C8 transistor as follows.

Circuit diagram symbol of the MMBA811C8 transistor

MMBA811C8 Transistor Specification

Transistor Code MMBA811C8
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT23
Transistor SMD Code C8
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 450
Transition Frequency FT 75MHz

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