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MM8010 NPN Transistor

The MM8010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MM8010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MM8010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MM8010 transistor as follows.

Circuit diagram symbol of the MM8010 transistor

MM8010 Transistor Specification

Transistor Code MM8010
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO107
Collector Power Dissipation (Maximum) PC 3.5W
Collector-Base Voltage (Maximum) VCB 35V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 600MHz
Collector Capacitance CC 3pF

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