MJW21196G NPN Transistor

The MJW21196G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJW21196G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJW21196G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJW21196G transistor as follows.

MJW21196G Transistor Specification

Transistor Code		MJW21196G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO247
Transistor SMD Code		MJW21196
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	4MHz
Collector Capacitance	CC	500pF

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