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MJW16212 NPN Transistor

The MJW16212 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJW16212 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJW16212 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJW16212 transistor as follows.

Circuit diagram symbol of the MJW16212 transistor

MJW16212 Transistor Specification

Transistor Code MJW16212
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO247
Collector Power Dissipation (Maximum) PC 150W
Collector-Base Voltage (Maximum) VCB 1500V
Collector-Emitter Voltage (Maximum) VCE 650V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 4
Transition Frequency FT 2.5MHz
Collector Capacitance CC 350pF

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