MJF6668G PNP Transistor

The MJF6668G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJF6668G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJF6668G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJF6668G transistor as follows.

MJF6668G Transistor Specification

Transistor Code		MJF6668G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220F
Transistor SMD Code		MJF6668
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		3000
Transition Frequency	FT	20MHz
Collector Capacitance	CC	300pF

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