MJF45H11G PNP Transistor

The MJF45H11G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJF45H11G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJF45H11G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJF45H11G transistor as follows.

MJF45H11G Transistor Specification

Transistor Code		MJF45H11G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220F
Transistor SMD Code		F45H11
Collector Power Dissipation (Maximum)	PC	36W
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	40MHz
Collector Capacitance	CC	230pF

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