MJF3055G NPN Transistor

The MJF3055G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJF3055G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJF3055G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJF3055G transistor as follows.

MJF3055G Transistor Specification

Transistor Code		MJF3055G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220F
Transistor SMD Code		F3055
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	90V
Collector-Emitter Voltage (Maximum)	VCE	90V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	2MHz

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