MJF16212 NPN Transistor

The MJF16212 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJF16212 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJF16212 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJF16212 transistor as follows.

MJF16212 Transistor Specification

Transistor Code		MJF16212
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO218
Collector Power Dissipation (Maximum)	PC	50W
Collector-Base Voltage (Maximum)	VCB	1500V
Collector-Emitter Voltage (Maximum)	VCE	650V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		4
Transition Frequency	FT	2.5MHz
Collector Capacitance	CC	350pF

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