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MJF10012 NPN Transistor

The MJF10012 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJF10012 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJF10012 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJF10012 transistor as follows.

Circuit diagram symbol of the MJF10012 transistor

MJF10012 Transistor Specification

Transistor Code MJF10012
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package ISO220
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 10A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 8V
Forward Current Transfer Ratio (hFE Value) 100
Collector Capacitance CC 350pF

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