MJE8503 NPN Transistor

The MJE8503 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE8503 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE8503 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE8503 transistor as follows.

MJE8503 Transistor Specification

Transistor Code		MJE8503
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	14V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		7.5
Collector Capacitance	CC	300pF

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