MJE8501 NPN Transistor

The MJE8501 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE8501 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE8501 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE8501 transistor as follows.

MJE8501 Transistor Specification

Transistor Code		MJE8501
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	65W
Collector-Base Voltage (Maximum)	VCB	1400V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	8V
Forward Current Transfer Ratio (hFE Value)		7.5
Collector Capacitance	CC	200pF

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