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MJE801T NPN Transistor

The MJE801T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE801T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE801T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE801T transistor as follows.

Circuit diagram symbol of the MJE801T transistor

MJE801T Transistor Specification

Transistor Code MJE801T
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 50W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100

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