MJE5851G PNP Transistor

The MJE5851G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE5851G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE5851G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE5851G transistor as follows.

MJE5851G Transistor Specification

Transistor Code		MJE5851G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220AB
Transistor SMD Code		MJE5851
Collector Power Dissipation (Maximum)	PC	80W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		5
Collector Capacitance	CC	270pF

UXPython is not the creator or an official representative of the MJE5851G PNP transistor. You can download the official MJE5851G PNP transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in TO220AB Package

BTA1952E3 PNP Transistor 3DD128A8D NPN Transistor 2N6040G PNP Transistor 2SD768K NPN Transistor MJE15028G NPN Transistor MJE5731G NPN Transistor BTC2881E3 NPN Transistor 3DD13005_G8D NPN Transistor BTA1012E3 PNP Transistor 2SB955K PNP Transistor 3DD13007_X1 NPN Transistor 3DD3145_A8 NPN Transistor HEP32 PNP Transistor 3DD13005F8 NPN Transistor MJE5730G PNP Transistor BUJ302A NPN Transistor HEP32A PNP Transistor 3DD13003M8D NPN Transistor 3DD13007_B8D NPN Transistor HEP42C PNP Transistor