MJE5851G PNP Transistor

The MJE5851G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE5851G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE5851G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE5851G transistor as follows.

MJE5851G Transistor Specification

Transistor Code		MJE5851G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220AB
Transistor SMD Code		MJE5851
Collector Power Dissipation (Maximum)	PC	80W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		5
Collector Capacitance	CC	270pF

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