MJE5850G PNP Transistor

The MJE5850G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE5850G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE5850G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE5850G transistor as follows.

MJE5850G Transistor Specification

Transistor Code		MJE5850G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220AB
Transistor SMD Code		MJE5850
Collector Power Dissipation (Maximum)	PC	80W
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		5
Collector Capacitance	CC	270pF

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