MJE5730G PNP Transistor

The MJE5730G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the MJE5730G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE5730G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the MJE5730G transistor as follows.

MJE5730G Transistor Specification

Transistor Code		MJE5730G
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220AB
Transistor SMD Code		MJE5730
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	10MHz

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