MJE51T NPN Transistor

The MJE51T is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MJE51T transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MJE51T transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MJE51T transistor as follows.

MJE51T Transistor Specification

Transistor Code		MJE51T
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	80W
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	2.5MHz

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